Laser polarization condition affecting ablation quality of thin membranes for SiC or ceramic based GaN/ferroelectric thin film MEMS and pressure sensors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00231136" target="_blank" >RIV/68407700:21230/15:00231136 - isvavai.cz</a>
Result on the web
<a href="http://www.jlps.gr.jp/lamp/lamp2015/download/LAMP2015_42_FinalProgram.pdf" target="_blank" >http://www.jlps.gr.jp/lamp/lamp2015/download/LAMP2015_42_FinalProgram.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Laser polarization condition affecting ablation quality of thin membranes for SiC or ceramic based GaN/ferroelectric thin film MEMS and pressure sensors
Original language description
AlGaN/GaN-based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. Creation of appropriate diaphragms and/or cantileversout of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For exam-ple, the sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demon-strated that 4H-SiC 80 ?m thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350 ?m-thick 4H-SiC substrate we produced an array of 275 ?m deep and 1000 ?m to 3000 ?m in diameter blind holes without damaging the 2 ?
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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