Capacitive methodes for testing of power semiconductor devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00230138" target="_blank" >RIV/68407700:21230/15:00230138 - isvavai.cz</a>
Result on the web
<a href="http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/882/616" target="_blank" >http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/882/616</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2298/FUEE1503495P" target="_blank" >10.2298/FUEE1503495P</a>

Result language
angličtina
Original language name
Capacitive methodes for testing of power semiconductor devices
Original language description
Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. The measurement of the voltage capacity dependence using the resonance principle is illustrated on the samples of 4kV and 6kV thyristors. The correspondence between theoretical estimate of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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