Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00303272" target="_blank" >RIV/68407700:21230/16:00303272 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface
Original language description
Because of the unique electronic properties, the freestanding graphene nanoribbons are intensively investigated in the last few years. The potential application extends to gas sensors, field effect transistors, spintronics, plasmonics and more. Until recently, there was no possibility to inexpensively produce such structures. By exploiting of the different crystallographic planes of SiC a promising method which may be used to produce freestanding graphene was enabled. In this study we present calculation of molecular mechanics and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We analyzed the effects of hydrogenization of the SiC surface and conducted a series of calculations adressing the shape of the resulting freestanding graphene layer. Finally, we calculated transmission spectrum and I/V curve of the structure.
Czech name
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Czech description
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Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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