Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00320102" target="_blank" >RIV/68407700:21230/17:00320102 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface
Original language description
In this study we present calculation of molecular mechanic and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We simulated two types of structural arrangements. The first structure, simulated mainly for purposes of comparisson, is planar SiC with graphene bilayer. The second structure is step-shaped SiC with graphene monolayer. We analyzed effects of hydrogenization of the SiC surface and conducted a series of calculations adressing shape of the resulting graphene layers. Finally, we calculated transmission spectrum and I/V curve of resulting structures.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 8th International Conference on Nanomaterials - Research and Application
ISBN
978-80-87294-71-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
110-115
Publisher name
Tanger
Place of publication
Ostrava
Event location
Brno
Event date
Nov 19, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000410656100018