Accurate diode behavioral model with reverse recovery

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00316663" target="_blank" >RIV/68407700:21230/18:00316663 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S0038110117304872" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0038110117304872</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.sse.2017.10.034" target="_blank" >10.1016/j.sse.2017.10.034</a>

Result language

angličtina

Original language name

Accurate diode behavioral model with reverse recovery

Original language description

This paper deals with the comprehensive behavioral model of p-n junction diode containing reverse recovery effect, applicable to all standard SPICE simulators supporting Verilog-A language. The model has been successfully used in several production designs, which require its full complexity, robustness and set of tuning parameters comparable with standard compact SPICE diode model. The model is like standard compact model scalable with area and temperature and can be used as a stand-alone diode or as a part of more complex device macro-model, e.g. LDMOS, JFET, bipolar transistor. The paper briefly presents the state of the art followed by the chapter describing the model development and achieved solutions. During precise model verification some of them were found non-robust or poorly converging and replaced by more robust solutions, demonstrated in the paper. The measurement results of different technologies and different devices compared with a simulation using the new behavioral model are presented as the model validation. The comparison of model validation in time and frequency domains demonstrates that the implemented reverse recovery effect with correctly extracted parameters improves the model simulation results not only in switching from ON to OFF state, which is often published, but also its impedance/admittance frequency dependency in GHz range. Finally the model parameter extraction and the comparison with SPICE compact models containing reverse recovery effect is presented.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/TE01020186" target="_blank" >TE01020186: Integrated Satellite and Terrestrial Navigation Technologies Centre</a><br>

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid-State Electronics

ISSN

0038-1101

e-ISSN

1879-2405

Volume of the periodical

139

Issue of the periodical within the volume

January

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

31-38

UT code for WoS article

000417283000005

EID of the result in the Scopus database

2-s2.0-85031504240