Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00334644" target="_blank" >RIV/68407700:21230/19:00334644 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21340/19:00334644 RIV/00216208:11320/19:10405661

Result on the web

<a href="https://doi.org/10.1016/j.actamat.2019.09.027" target="_blank" >https://doi.org/10.1016/j.actamat.2019.09.027</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.actamat.2019.09.027" target="_blank" >10.1016/j.actamat.2019.09.027</a>

Result language

angličtina

Original language name

Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study

Original language description

The microstructural phenomena occurring in 6H–SiC subjected to different irradiation conditions and annealing temperatures were investigated to assess the suitability of 6H–SiC as a structural material for nuclear applications. To this aim, a single crystal of 6H–SiC was subjected to He+ irradiation at 300 keV with different fluences and at temperatures ranging from 25 to 750 °C. Rutherford backscattering/channeling (RBS/C), X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses were combined to shed light on the microstructural changes induced by irradiation and subsequent annealing (750 to 1500 °C). At room temperature, amorphization starts to occur at a fluence of 2.5 x 1016 cm-2 (0.66 dpa). On the contrary, amorphization was prevented at high irradiation temperatures and fluences. Furthermore, a thin and highly strained region located around the maximum He concentration (Rp) formed. This region results from the accumulation of interstitial atoms which are driven toward the highly damaged region under the actions of a strain gradient and high temperature. Regardless of the fluence and irradiation temperature, the material stores elastic energy, which leads to the trapping of He in dissimilar defect geometries. For irradiation temperatures below 750 °C, helium was accumulated in bubbles which coarsened after annealing. On the other hand, for an irradiation temperature of 750 °C, helium was trapped in platelets (even for medium fluence), which evolved into a homogeneous dense array of cavities during annealing. DFT calculations show that the bubbles are under high pressure and contribute to developing the overall tensile strain in the single crystal 6H–SiC.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20501 - Materials engineering

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta materialia

ISSN

1359-6454

e-ISSN

1873-2453

Volume of the periodical

181

Issue of the periodical within the volume

December

Country of publishing house

GB - UNITED KINGDOM

Number of pages

13

Pages from-to

160-172

UT code for WoS article

000498749300014

EID of the result in the Scopus database

2-s2.0-85073016940