6H-SiC blistering efficiency as a function of the hydrogen implantation fluence
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00332092" target="_blank" >RIV/68407700:21340/19:00332092 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2018.10.005" target="_blank" >https://doi.org/10.1016/j.apsusc.2018.10.005</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2018.10.005" target="_blank" >10.1016/j.apsusc.2018.10.005</a>
Alternative languages
Result language
angličtina
Original language name
6H-SiC blistering efficiency as a function of the hydrogen implantation fluence
Original language description
Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is only possible in a surprisingly narrow window of ion fluence. By combining experimental results with Finite Element Method (FEM) modeling, we deduce the fraction of the implanted fluence used to pressurize blister cavities. Moreover, the blistering efficiency depends on the amount of the damage produced during ion implantation because it affects the microstructure of the implanted samples. Maximum efficiency of the H ion implantation is obtained when the vacancy distribution is narrow. After implantation, the vacancies are available to favor the formation of vacancy-rich complexes that are able to trap most implanted H atoms then form H-2-filled nano-bubbles. Following annealing, the bubbles are sufficiently close enough to each other to allow an efficient overlap of the stress fields they generate. At higher fluence, the damage concentration becomes very large. Its distribution widens, and either a part of H (which remains) in the bubbles and platelets located outside the layer which contains cracks, is not involved in the formation of cracks or the formation of amorphous layer. After annealing, the amorphous/crystal interface becomes a receiver for the vacancies, resulting in fewer "free" vacancies, and therefore subsequently less H-2 for the build up of internal pressure of bubbles and the sustained growth of nano-cracks. The optimization of the smart-cut process usage is when the implantation induces 3.4% of strain maximum out-off-plane.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/GA17-17921S" target="_blank" >GA17-17921S: Radiation damage tolerant nanomaterials: design of interfaces with self-healing properties</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Volume of the periodical
466
Issue of the periodical within the volume
01.02.2019
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
10
Pages from-to
141-150
UT code for WoS article
000452842500018
EID of the result in the Scopus database
2-s2.0-85054449417