Mechanism of defect evolution in H+ and He+ implanted InP

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00352827" target="_blank" >RIV/68407700:21230/21:00352827 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1088/1674-1056/abf640" target="_blank" >https://doi.org/10.1088/1674-1056/abf640</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1674-1056/abf640" target="_blank" >10.1088/1674-1056/abf640</a>

Result language
angličtina
Original language name
Mechanism of defect evolution in H+ and He+ implanted InP
Original language description
The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H-2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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