Dendritic Growth at Constant Voltage Between Electrodes Coated by SnBiAg, SAC, SnCu and SnPb Solder
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00343933" target="_blank" >RIV/68407700:21230/20:00343933 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/ISSE49702.2020.9121013" target="_blank" >https://doi.org/10.1109/ISSE49702.2020.9121013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE49702.2020.9121013" target="_blank" >10.1109/ISSE49702.2020.9121013</a>
Alternative languages
Result language
angličtina
Original language name
Dendritic Growth at Constant Voltage Between Electrodes Coated by SnBiAg, SAC, SnCu and SnPb Solder
Original language description
In this work, dendritic growth between electrodes coated by Sn42Bi57Ag1, SAC 305, Sn99.3Cu0.7 and Sn63Pb37 Solder was studied. The water drop test method with a 0.02permille concentration of NaCl dissolved in the deionized and purified water was used to support the growth of dendrites on the samples corresponding to the IPC-B-24 standard . The dendritic growth was induced under the constant low voltage DC bias (1.5V) between the electrodes and the results between different alloys were compared. The solder alloys electro-chemical migration resistance was compared with respect to their Tin content, however the low temperature solder paste with 42wt% tin content showed similar results as the solder alloy with 99.3wt% of Tin. The change of surface insulation resistance (SIR) in time during the dendritic growth was observed. The dendrites were subjected to an EDX analysis on the electron microscope and the fern dendrite structure material analysis was conducted.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2020 43rd International Spring Seminar on Electronics Technology (ISSE)
ISBN
978-1-7281-6773-2
ISSN
2161-2536
e-ISSN
2161-2528
Number of pages
4
Pages from-to
—
Publisher name
IEEE Press
Place of publication
New York
Event location
Demanovska Valley
Event date
May 14, 2020
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000610543500041