Output Power Change Analysis at Temperature Variation in Case of Synchronous Bi-Directional DC/DC Converter using Wide Band Gap Devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00367662" target="_blank" >RIV/68407700:21230/23:00367662 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/10221526" target="_blank" >https://ieeexplore.ieee.org/document/10221526</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/PIERS59004.2023.10221526" target="_blank" >10.1109/PIERS59004.2023.10221526</a>

Result language
angličtina
Original language name
Output Power Change Analysis at Temperature Variation in Case of Synchronous Bi-Directional DC/DC Converter using Wide Band Gap Devices
Original language description
The paper shows the designed converter output power changes with the temperature changes in case of various semiconductor switches. Mostly, wide band gap semiconductor-based switches like silicon carbide and GaN have a higher temperature capability than silicon for high power applications. 20-kW synchronous bi-directional DC/DC converters were designed for the silicon and silicon carbide switches using the LTSPICE simulations at different temperatures. The synchronous bi-directional DC/DC converters were designed for 75 kHz switching frequency having the duty cycle of 30 % to achieve the desired output power.
Czech name
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Czech description
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Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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