Influence of applied tensile/compressive stress on He-irradiated SiC: Examining defect evolution through experimental investigation and DFT simulations
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00378008" target="_blank" >RIV/68407700:21230/24:00378008 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.ceramint.2024.09.136" target="_blank" >https://doi.org/10.1016/j.ceramint.2024.09.136</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.ceramint.2024.09.136" target="_blank" >10.1016/j.ceramint.2024.09.136</a>
Alternative languages
Result language
angličtina
Original language name
Influence of applied tensile/compressive stress on He-irradiated SiC: Examining defect evolution through experimental investigation and DFT simulations
Original language description
This study investigates the effects of applied tensile and compressive stresses on the evolution of defects in He-irradiated silicon carbide (SiC) materials. By combining experimental studies with density-functional theory (DFT) simulations, we systematically analyzed the microstructural changes and defect formation mechanisms in SiC under stress. The research focused on He irradiation of SiC at 750 °C, with a fluence of 1 x 1017 He/cm2. The results revealed that the strain resulting from radiation damage depends on the applied stress during irradiation. Moreover, the formation of platelets is influenced by this applied stress: tensile stress promotes platelet growth, while compressive stress inhibits it. DFT simulations further supported these experimental findings by showing that under tensile strain, both carbon vacancies (Cv) and He atoms exhibit low energy barriers for migration. This phenomenon facilitates platelet growth, aligning well with the observations made in the experiments. However, when considering applications like semiconductor thin film transfer, such as the Smart-cut technique, He implantation under tensile stress can actually be advantageous. This approach enables the use of lower He fluence, which in turn reduces the overall cost of the operation. By strategically leveraging the effects of tensile stress on He implantation, it becomes possible to optimize processes like Smart-cut for more efficient and cost-effective thin film transfer in semiconductor manufacturing.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/EH22_008%2F0004590" target="_blank" >EH22_008/0004590: Robotics and advanced industrial production</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Ceramics International
ISSN
0272-8842
e-ISSN
1873-3956
Volume of the periodical
50
Issue of the periodical within the volume
22
Country of publishing house
IT - ITALY
Number of pages
8
Pages from-to
47902-47909
UT code for WoS article
001338962800001
EID of the result in the Scopus database
2-s2.0-85203830799