Transistors Based on the Nitride Semiconductor Heterostructures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00385971" target="_blank" >RIV/68407700:21230/25:00385971 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Transistors Based on the Nitride Semiconductor Heterostructures
Original language description
GaN based depletion and enhancement mode high electron mobility transistors (HEMT) were prepared and studied with the AlGaN/GaN heterojunction as the main channel. The e-mode operation was achieved by the addition of the Mg doped p-GaN suppression layer above the AlGaN blocking layer. Prepared samples were characterised by the van der Pauw method, output and transfer, and CV measurements. Furthermore, the diffusion of Mg was studied using the SIMS method. Enhancement mode operation was successfully achieved for the p-GaN variant. Current collapse degradation was observed in positively biased samples. Mg diffusion was successfully stopped by the addition of the absorption layer of the undoped GaN under the p-GaN layer.
Czech name
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Czech description
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Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Student Scientific Conference POSTER – 29/2025
ISBN
978-80-01-07422-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Fakulta elektrotechnická
Place of publication
Praha
Event location
Praha
Event date
May 22, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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