Ga2O3 Vertical Transistor Modeling and Analysis

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00385972" target="_blank" >RIV/68407700:21230/25:00385972 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Ga2O3 Vertical Transistor Modeling and Analysis
Original language description
Alpha-phase gallium oxide (α-Ga₂O₃) is a promising ultra-wide bandgap semiconductor with exceptional properties, making it ideal for high-power and high-temperature applications. This study models and analyzes vertical transistors based on α-Ga₂O₃ using Silvaco Atlas simulations. Results show stable operation at elevated temperatures, with slight increases in threshold voltage and decreases in drain current due to reduced electron mobility. Higher doping concentrations in the drift layer decrease the breakdown voltage. Calibrated DC characteristics showed a drain current of 1.97 A at a drain voltage of 30 V and a gate voltage of 11.5 V, with a threshold voltage of 6.12 V and a breakdown voltage of 86.7 V. These findings highlight the potential of α-Ga₂O₃ vertical transistors for high-power and high-temperature applications. Future work will optimize device structures and explore new fabrication techniques.
Czech name
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Czech description
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Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Student Scientific Conference POSTER – 29/2025
ISBN
978-80-01-07422-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Fakulta elektrotechnická
Place of publication
Praha
Event location
Praha
Event date
May 22, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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