Fast and Sensitive Defect Characterisation and Spectral Response Measurement of Thin Film Silicon Solar Structure

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F03%3A04092499" target="_blank" >RIV/68407700:21340/03:04092499 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Fast and Sensitive Defect Characterisation and Spectral Response Measurement of Thin Film Silicon Solar Structure
Original language description
Fourier Transform Photocurrent Spectroscopy (FTPS) has been used for a fast and sensitive quality assessment of photovoltaic thin films, such as the microcrystalline silicon. Because the properties of this material strongly depend on the substrate used,we demonstrate here how to utilize the FTPS for measurement of films grown on conductive TCO covered glass substrate, as it is the case of solar cells. Further, we have studied homogeneity of the optoelectronic properties of layers over large areas (30x30 cm2) and for one case correlated the results with the cell efficiency over the area. Moreover, we show a possibility to interpret the FTPS data on cells as the quantum efficiency (spectral response) measurement and to extend the measuring range from near IR over the whole visible region.
Czech name
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Czech description
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Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Abstract Book of the 3rd World Conference of Photovoltaic Energy Conversion
ISBN
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ISSN
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e-ISSN
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Number of pages
1
Pages from-to
146-146
Publisher name
ILE, Osaka University
Place of publication
Osaka
Event location
Osaka
Event date
May 11, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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