Single photon avalanche diode on Ge-Si, dreams, objectives and first results

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F07%3A04132697" target="_blank" >RIV/68407700:21340/07:04132697 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Single photon avalanche diode on Ge-Si, dreams, objectives and first results
Original language description
We are presenting the design, technology development and tuning of the Single Photon Avalanche Diode fabricated on the germanium - silicon epitaxial layer. The ultimate goal is to develop a solid state photon detector with picosecond timing resolution and stability and an increased spectral sensitivity beyond 1100 nanometres in comparison to detectors based on silicon. The technology development steps on the Ge-Si epitaxial layer are presented together with the first results of the preparation of the shallow junction and its parameters. The diffusion and annealing models have been tuned for GeSi epitaxial layer and implantation. The resulting concentration profiles have been verified by two independent diagnostics methods. The first avalanche diode structures on the basis of the Ge0.4Si0.6, epitaxial layer on Silicon have been prepared and tested.
Czech name
Není k dispozici
Czech description
Není k dispozici

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Photon Counting Applications, Quantum Optics, and Quantum Cryptography
ISBN
978-0-8194-6711-9
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
03-04
Publisher name
SPIE
Place of publication
Bellingham
Event location
Praha
Event date
Apr 16, 2007
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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