Pr:YAlO3 Microchip Laser at 662 nm
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00181192" target="_blank" >RIV/68407700:21340/11:00181192 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Pr:YAlO3 Microchip Laser at 662 nm
Original language description
A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal surfaces. As a pumping source, 1-W GaN laser-diode was used. The maximal output powerof 27.4 mW was reached at 11°C active medium temperature. The slope efficiency related to the incident pumping power was 9 %.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Advanced Solid-State Photonics - Technical Digest
ISBN
978-1-55752-904-6
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
"ATuB29-1"-"ATuB29-3"
Publisher name
OSA
Place of publication
Washington
Event location
Istanbul
Event date
Feb 13, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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