Pr:YAlO3 Microchip Laser
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F10%3A00170505" target="_blank" >RIV/68407700:21340/10:00170505 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Pr:YAlO3 Microchip Laser
Original language description
A continuous-wave Pr:YAlO3 microchip laser operation in the near-infrared spectral region is reported. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. For active medium pumping, GaN laser diode providing up to 1 W of output power at 448 nm was used. 139 mW of laser radiation at 747 nm wavelength has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was 25 %.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optics Letters
ISSN
0146-9592
e-ISSN
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Volume of the periodical
35
Issue of the periodical within the volume
15
Country of publishing house
US - UNITED STATES
Number of pages
2
Pages from-to
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UT code for WoS article
000281056700019
EID of the result in the Scopus database
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