747 nm Pr:YAP Microchip-laser Output Characteristics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00181155" target="_blank" >RIV/68407700:21340/11:00181155 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.873046" target="_blank" >http://dx.doi.org/10.1117/12.873046</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.873046" target="_blank" >10.1117/12.873046</a>
Alternative languages
Result language
angličtina
Original language name
747 nm Pr:YAP Microchip-laser Output Characteristics
Original language description
Laser characteristics of Pr:YAlO3 microchip laser operating in the near-infrared spectral region are reported. For active medium pumping, GaN laser diode providing up to 1 W of output power at ~448 nm was employed. Microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. The continuous-wave output radiation at 747 nm with maximum power of 139 mW has been extracted from the microchip laser system. Slope efficiency related to the incident pumping power was25 %.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE Vol. 7912 - Solid State Lasers XX: Technology and Devices
ISBN
978-0-8194-8449-9
ISSN
0277-786X
e-ISSN
—
Number of pages
6
Pages from-to
"79121X-1"-"79121X-6"
Publisher name
SPIE
Place of publication
Washington
Event location
San Francisco, California
Event date
Jan 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000297726600051