Pr:YAlO3 Microchip Laser at 662 nm
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00181186" target="_blank" >RIV/68407700:21340/11:00181186 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/lapl.201010108" target="_blank" >http://dx.doi.org/10.1002/lapl.201010108</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/lapl.201010108" target="_blank" >10.1002/lapl.201010108</a>
Alternative languages
Result language
angličtina
Original language name
Pr:YAlO3 Microchip Laser at 662 nm
Original language description
A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at 448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11-35 °C. The best result 27.4 mW of output power has been reached at 11°C. The slope efficiency related to the incident pumping power was 9 %.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Laser Physics Letters
ISSN
1612-2011
e-ISSN
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Volume of the periodical
8
Issue of the periodical within the volume
2
Country of publishing house
DE - GERMANY
Number of pages
4
Pages from-to
116-119
UT code for WoS article
000287162300005
EID of the result in the Scopus database
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