Layers of metals nanoparticles on various semiconductors for hydrogen detection

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00377576" target="_blank" >RIV/68407700:21340/12:00377576 - isvavai.cz</a>

Result on the web

<a href="https://www.confer.cz/proceedings/nanocon/2012.pdf#page=142" target="_blank" >https://www.confer.cz/proceedings/nanocon/2012.pdf#page=142</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Layers of metals nanoparticles on various semiconductors for hydrogen detection

Original language description

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H-2 in the air, where the current change is over one order of magnitude. I-V measurements showed high rectification ratio of these structures and Shottky barrier height calculated from these measurements was high when compared to other methods of interface preparation. It points to very small Fermi level pinning, what is important prerequisite for hydrogen sensing. SEM measurements showed the layers were composed of small aggregates uniformly distributed on semiconductor surface. Size and number of these aggregates can be tuned by parameters of deposition.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

21001 - Nano-materials (production and properties)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

NANOCON 2012, 4th International Conference

ISBN

978-80-87294-35-2

ISSN

2694-930X

e-ISSN

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Number of pages

5

Pages from-to

142-146

Publisher name

TANGER

Place of publication

Ostrava

Event location

Brno

Event date

Oct 23, 2012

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000333697100025