Power-scaling of Pr:YAlO3 Laser Operating in CW Regime at 747 nm and 720 nm Wavelengths
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00207803" target="_blank" >RIV/68407700:21340/13:00207803 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2001096" target="_blank" >http://dx.doi.org/10.1117/12.2001096</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2001096" target="_blank" >10.1117/12.2001096</a>
Alternative languages
Result language
angličtina
Original language name
Power-scaling of Pr:YAlO3 Laser Operating in CW Regime at 747 nm and 720 nm Wavelengths
Original language description
We report efficient continuous-wave laser operation of laser-diode pumped Pr:YAlO3 crystal in the power-scaled resonator arrangement. Using two pumping GaN-laser-diodes emitting at 448 nm wavelengths with a maximum output power of 1 W each, 290 mW of Pr:YAlO3 output power in the near-infrared spectral region (747 nm) with oscillation threshold of about 500 mW has been reached. The maximum absorbed pump power was approximately 1.5 W resulting in the slope efficiency of 28 %. Moreover, switchable laser operation at two wavelengths (747 nm and 720 nm) has been demonstrated employing the broadband laser resonator mirrors in connection with the tuning element (Lyot filter).
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GPP102%2F12%2FP505" target="_blank" >GPP102/12/P505: GaN-diode pumped Praseodymium laser systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE Vol. 8599 - Solid State Lasers XXII: Technology and Devices
ISBN
978-0-8194-9368-2
ISSN
0277-786X
e-ISSN
—
Number of pages
6
Pages from-to
"85991S-1"-"85991S-6"
Publisher name
SPIE
Place of publication
Washington
Event location
San Francisco
Event date
Feb 2, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000321895100057