Power-scaling of Pr:YAlO3 Microchip Laser Operating at 747 nm Wavelength at Room Temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F14%3A00219643" target="_blank" >RIV/68407700:21340/14:00219643 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1612-2011/11/10/105802" target="_blank" >http://dx.doi.org/10.1088/1612-2011/11/10/105802</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1612-2011/11/10/105802" target="_blank" >10.1088/1612-2011/11/10/105802</a>

Result language
angličtina
Original language name
Power-scaling of Pr:YAlO3 Microchip Laser Operating at 747 nm Wavelength at Room Temperature
Original language description
We report efficient continuous wave laser operation of a laser diode both-side pumped Pr:YAlO3 crystal at room temperature in a microchip geometry arrangement. The microchip was formed by a 5 mm long 0.6 at.% doped Pr:YAlO3 crystal having dielectric mirrors directly deposited on its facets. As pump sources, two InGaN laser diodes with maximum output power of 1 W each were used. 490 mW of output power at 747 nm with an oscillation threshold of about 300 mW has been demonstrated. The corresponding slope efficiency related to the absorbed pump power was 45%.
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
—

Project
<a href="/en/project/GPP102%2F12%2FP505" target="_blank" >GPP102/12/P505: GaN-diode pumped Praseodymium laser systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)