GaAsSb strain reducing layer covering InAs/GaAs quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00211924" target="_blank" >RIV/68407700:21340/13:00211924 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
GaAsSb strain reducing layer covering InAs/GaAs quantum dots
Original language description
GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Třetí studentská vědecká konference fyziky pevných látek
ISBN
978-80-01-05344-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
46-50
Publisher name
ČVUT, Fakulta jaderná a fyzikálně inženýrská
Place of publication
Praha
Event location
Dvorská bouda
Event date
Jun 28, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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