Study of Thin Films of LiNbO3 Using FTIR and Raman Spektroscopy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F11%3A00185456" target="_blank" >RIV/68407700:21460/11:00185456 - isvavai.cz</a>
Result on the web
<a href="http://spiedigitallibrary.org/proceedings/resource/2/psisdg/8306/1/830611_1?isAuthorized=no" target="_blank" >http://spiedigitallibrary.org/proceedings/resource/2/psisdg/8306/1/830611_1?isAuthorized=no</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.910590" target="_blank" >10.1117/12.910590</a>
Alternative languages
Result language
angličtina
Original language name
Study of Thin Films of LiNbO3 Using FTIR and Raman Spektroscopy
Original language description
Lithium niobate (LiNbO(3)) is a material which can be used in many applications. LiNbO3 thin films were studied for the development of doped planar waveguides using Pulsed Laser Deposition (PLD) method from two targets. The films were deposited by PLD onSiO(2)/Si and (0001) sapphire substrates at temperatures 650 degrees C, 700 degrees C, 750 degrees C, from one crystalline and two sintered LiNbO(3) targets using KrF excimer laser. The film thickness was similar to 680 nanometers. Two techniques Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy - are used to characterize the dependence of the deposited thin films on the deposition conditions. These methods characterize the materials by monitoring their phonons whose spectra are sensitive to film deposition parameters. Bulk LiNbO(3) has rhombohedral crystal structure with two chemical units per primitive cell, it means, that 30 degrees of freedom are distributed between A(1) and E irreducible representations. The pr
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of SPIE Vol. 8306 - Photonics, Devices, and Systems V
ISBN
978-0-8194-8953-1
ISSN
0277-786X
e-ISSN
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Number of pages
1
Pages from-to
91
Publisher name
SPIE
Place of publication
Bellingham
Event location
Praha
Event date
Aug 24, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
000297582500037