Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F19%3A00329975" target="_blank" >RIV/68407700:21460/19:00329975 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21670/19:00329975

Result on the web

<a href="https://doi.org/10.1088/1748-0221/14/01/C01023" target="_blank" >https://doi.org/10.1088/1748-0221/14/01/C01023</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/14/01/C01023" target="_blank" >10.1088/1748-0221/14/01/C01023</a>

Result language

angličtina

Original language name

Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera

Original language description

Nowadays, pixelated detectors based on Timepix readout chip play important role in various fields of science and research like particle physics, advanced spectrometry and especially X-ray imaging for medical and material purposes. Present work is focused on the evaluation of the 350 mu m thick prototype (semi-insulating) SI GaAs sensor performance and its comparison to 300 mu m thick Si sensor that was chosen as a reference. Both sensors consist of 256 x 256 pixels matrix with pixel pitch of 55 mu m. We performed flat field illumination to test the pixel homogeneity and found out that the response of GaAs sensor is less homogeneous in terms of number of counts across the sensor compared to Si sensor. The imaging performance was tested using two samples of different absorption strength, specifically one less-absorbing sample and one more-absorbing sample. We found out that our fabricated SI GaAs sensor shows better imaging performance than Si sensor in case of imaging more-absorbing sample and vice versa. This is due to different prevalent detection efficiency regions. The spatial resolution was determined to be 8.73 lp/mm and 8.25 lp/mm for GaAs and Si sensor, respectively. Also, spectrometric measurements were carried out and results show that Si sensor has about 2 times higher energy resolution in comparison with SI GaAs sensor.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10303 - Particles and field physics

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Volume of the periodical

14

Issue of the periodical within the volume

C01023

Country of publishing house

GB - UNITED KINGDOM

Number of pages

10

Pages from-to

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UT code for WoS article

000456944800002

EID of the result in the Scopus database

2-s2.0-85062515171