Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F18%3A00337156" target="_blank" >RIV/68407700:21670/18:00337156 - isvavai.cz</a>

Result on the web

<a href="https://ieeexplore.ieee.org/document/8544509" target="_blank" >https://ieeexplore.ieee.org/document/8544509</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ASDAM.2018.8544509" target="_blank" >10.1109/ASDAM.2018.8544509</a>

Result language

angličtina

Original language name

Performance of bulk semi-insulating GaAs-based sensors with different pixel sizes for Timepix radiation camera

Original language description

Prototype bulk semi-insulating GaAs sensors were connected to the Timepix readout chip and their performance was examined. Overall, three sensors with pixel pitch of 55 mu m, 165 mu m and 220 mu m were tested. Firstly, open beam illumination responses were obtained on which typical patterns of detection efficiency inhomogeneities appear, however, the patterns are, to large extend, removable by post processing corrections. Secondly, sensors were able to retrieve images of biological and technical samples of high quality with spatial resolution of 8.7 lp/mm (55 mu m pitch), 2.7 lp/mm (165 mu m pitch) and 2.0 lp/mm (220 mu m pitch). Also, 55 mu m, 165 mu m pitch sensors were able to perform spectrometric measurement. Energy resolution of 55 mu m pitch sensor is 5 % at 59.5 keV and 10% at 160.6 keV in case of 165 mu m pitch sensor.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Advanced Semiconductor Devices and Microsystems. International Conference. 12th 2018. (ASDAM 2018)

ISBN

978-1-5386-7490-1

ISSN

2475-2916

e-ISSN

—

Number of pages

4

Pages from-to

121-124

Publisher name

American Institute of Physics and Magnetic Society of the IEEE

Place of publication

San Francisco

Event location

Smolenice

Event date

Oct 21, 2018

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000468753600027