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Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F19%3A00340711" target="_blank" >RIV/68407700:21460/19:00340711 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216305:26220/19:PU130174

  • Result on the web

    <a href="https://doi.org/10.1016/j.aeue.2018.12.023" target="_blank" >https://doi.org/10.1016/j.aeue.2018.12.023</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.aeue.2018.12.023" target="_blank" >10.1016/j.aeue.2018.12.023</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits

  • Original language description

    This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasifloating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 mu in CMOS process from TSMC with total chip area 350 mu m x 78 mu m. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 mu W power and offers near rail-to-rail input common mode range. (C) 2018 Elsevier GmbH. All rights reserved.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    AEU-International Journal of Electronics and Communications

  • ISSN

    1434-8411

  • e-ISSN

    1618-0399

  • Volume of the periodical

    100

  • Issue of the periodical within the volume

    2019

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    7

  • Pages from-to

    32-38

  • UT code for WoS article

    000460368700005

  • EID of the result in the Scopus database