Fabrication, characterization and simulation of channel stop for n in p-substrate silicon pixel detectors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F14%3A00223627" target="_blank" >RIV/68407700:21670/14:00223627 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/1748-0221/9/07/C07013" target="_blank" >http://iopscience.iop.org/1748-0221/9/07/C07013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/9/07/C07013" target="_blank" >10.1088/1748-0221/9/07/C07013</a>
Alternative languages
Result language
angličtina
Original language name
Fabrication, characterization and simulation of channel stop for n in p-substrate silicon pixel detectors
Original language description
Silicon detectors made on p-substrates are expected to have a better radiation hardness as compared to detectors made on n-substrates. However, the fixed positive oxide charges induce an inversion layer of electrons in the substrate, which connects the pixels. The common means of solving this problem is by using a p-spray, individual p-stops or a combination of the two. Here, we investigate the use of field plates to suppress the fixed positive charges and to prevent the formation of an inversion layer.The fabricated detector shows a high breakdown voltage and low interpixel leakage current for a structure using biased field plates with a width of 20 ?m. By using a spice model for simulation of the preamplifier, a cross talk of about 1.6% is achievedwith this detector structure. The cross talk is caused by capacitive and resistive coupling between the pixels.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JB - Sensors, detecting elements, measurement and regulation
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LG13031" target="_blank" >LG13031: Collaboration of the Czech Republic with CERN</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
7
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
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UT code for WoS article
000340050700013
EID of the result in the Scopus database
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