The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28610%2F17%3A63516123" target="_blank" >RIV/70883521:28610/17:63516123 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S092442471630646X" target="_blank" >http://www.sciencedirect.com/science/article/pii/S092442471630646X</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.sna.2017.05.019" target="_blank" >10.1016/j.sna.2017.05.019</a>
Alternative languages
Result language
angličtina
Original language name
The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers
Original language description
A novel approach to wet etching of silicon wafers (100) is described in this study. Homogenous organized surface structures were prepared by the utilization of self-organized flow in the etching solution (Bénard-Marangoni thermocapillar instability). The driving force behind this process is a temperature gradient generated by the etching apparatus exclusively constructed for this research. The influences of temperature gradients (1–20 K) and etching time (20–55 min) were studied, with the potassium hydroxide/isopropyl alcohol etching solution. Obtained results indicate that self-organized flow can be utilized for specific and rapid etching, which allows significant variation of the topography and reflectivity of the silicon wafer surface textured in this way.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/LO1504" target="_blank" >LO1504: Centre of Polymer Systems Plus</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Sensors and Actuators, A: Physical
ISSN
0924-4247
e-ISSN
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Volume of the periodical
262
Issue of the periodical within the volume
Neuveden
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
1-9
UT code for WoS article
000404491900001
EID of the result in the Scopus database
2-s2.0-85019872451