AC and DC Quantum Hall Measurements in GaAs-Based Devices at Temperatures Up To 4.2 K

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F18%3AN0000096" target="_blank" >RIV/00177016:_____/18:N0000096 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/19:00326223

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8574978" target="_blank" >https://ieeexplore.ieee.org/document/8574978</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TIM.2018.2882216" target="_blank" >10.1109/TIM.2018.2882216</a>

Jazyk výsledku

angličtina

Název v původním jazyce

AC and DC Quantum Hall Measurements in GaAs-Based Devices at Temperatures Up To 4.2 K

Popis výsledku v původním jazyce

In this paper, we describe ac and dc quantum Hall effect measurements at temperatures above 1.5 K, which is beyond the commonly used value for high precision measurements of the quantum Hall resistance (QHR). It is shown that GaAs devices with high electron density of about 5 × 10 11 cm 2 can be used as reliable dc resistance quantum standards with quantization of R H (2) value with accuracy within a few parts in 10 9 even at temperatures up to 4.2 K. The devices have exhibited well-developed quantum Hall plateaus in the ac regime too, again at temperatures up to 4.2 K. The measurement system consists of a self-made cryogenic probe with TO-8 type socket together with coaxial wiring and a digitally assisted bridge suitable for ac quantum Hall effect measurements. The experiments were performed with devices placed in new double-shielded TO-8 holders. Our investigations and the evaluation of the measurement system are dedicated for the future realization of the quantum impedance standard based on ac QHR.

Název v anglickém jazyce

AC and DC Quantum Hall Measurements in GaAs-Based Devices at Temperatures Up To 4.2 K

Popis výsledku anglicky

In this paper, we describe ac and dc quantum Hall effect measurements at temperatures above 1.5 K, which is beyond the commonly used value for high precision measurements of the quantum Hall resistance (QHR). It is shown that GaAs devices with high electron density of about 5 × 10 11 cm 2 can be used as reliable dc resistance quantum standards with quantization of R H (2) value with accuracy within a few parts in 10 9 even at temperatures up to 4.2 K. The devices have exhibited well-developed quantum Hall plateaus in the ac regime too, again at temperatures up to 4.2 K. The measurement system consists of a self-made cryogenic probe with TO-8 type socket together with coaxial wiring and a digitally assisted bridge suitable for ac quantum Hall effect measurements. The experiments were performed with devices placed in new double-shielded TO-8 holders. Our investigations and the evaluation of the measurement system are dedicated for the future realization of the quantum impedance standard based on ac QHR.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/7AX13027" target="_blank" >7AX13027: Automated impedance metrology extending the quantum toolbox for electricity</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Instrumentation and Measurement

ISSN

0018-9456

e-ISSN

1557-9662

Svazek periodika

68

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

2106 - 2112

Kód UT WoS článku

000468210200065

EID výsledku v databázi Scopus

2-s2.0-85058634137