Prediction of half-semiconductor antiferromagnets with vanishing net magnetization

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F15%3A10315454" target="_blank" >RIV/00216208:11310/15:10315454 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/c5ra05257b" target="_blank" >http://dx.doi.org/10.1039/c5ra05257b</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c5ra05257b" target="_blank" >10.1039/c5ra05257b</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Prediction of half-semiconductor antiferromagnets with vanishing net magnetization

Popis výsledku v původním jazyce

Half-metallic antiferromagnets have proven to be promising candidates for spintronic applications, since the zero net magnetization leads to low stray fields. Here, using a self-consistent DFT + U approach, we found that in a two-dimensional semiconductor codoped with different transition metal pairs, spinpolarized electrons and zero magnetization co-exist. We systematically investigated a Fe-Cr codoped monolayer boron nitride (BN) sheet. Interestingly, the Fe-Cr codoping in the BN sheet induces a half-semiconductor feature, with fully spin-polarized valence and conduction bands belonging to the same spin channel and completely compensated spontaneous magnetization. We propose that this type of materials are half-semiconductor antiferromagnets (HSCAF).Spin gapless semiconductor antiferromagnets (SGSAF) with zero net magnetism are also achieved in such codoped systems. Moreover, we find that HSCAF can be realized in other two-dimensional materials, such as monolayer AlN and GaN with Cr

Název v anglickém jazyce

Prediction of half-semiconductor antiferromagnets with vanishing net magnetization

Popis výsledku anglicky

Half-metallic antiferromagnets have proven to be promising candidates for spintronic applications, since the zero net magnetization leads to low stray fields. Here, using a self-consistent DFT + U approach, we found that in a two-dimensional semiconductor codoped with different transition metal pairs, spinpolarized electrons and zero magnetization co-exist. We systematically investigated a Fe-Cr codoped monolayer boron nitride (BN) sheet. Interestingly, the Fe-Cr codoping in the BN sheet induces a half-semiconductor feature, with fully spin-polarized valence and conduction bands belonging to the same spin channel and completely compensated spontaneous magnetization. We propose that this type of materials are half-semiconductor antiferromagnets (HSCAF).Spin gapless semiconductor antiferromagnets (SGSAF) with zero net magnetism are also achieved in such codoped systems. Moreover, we find that HSCAF can be realized in other two-dimensional materials, such as monolayer AlN and GaN with Cr

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

58

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

46640-46647

Kód UT WoS článku

000355702900029

EID výsledku v databázi Scopus

2-s2.0-84930966049