Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10108224" target="_blank" >RIV/00216208:11320/11:10108224 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/11:00367114

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.83.235327" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.83.235327</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.83.235327" target="_blank" >10.1103/PhysRevB.83.235327</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Popis výsledku v původním jazyce

Photoelectron spectroscopy and diffraction have been used to investigate structural changes during the annealing process of Ga(1-x)Mn(x)As samples. Hard x-ray radiation helped in observing photoelectron core-level spectra and electron diffraction from the bulk underlying the oxidized surface layer. High electron-energy resolution enabled us to separate the components due to substitutional and interstitial Mn atoms in the intrinsic Mn 2p(3/2) photoemission profile, resulting in two peaks at 638.8 and 639.5 eV binding energy, respectively. The peaks display the known characteristic behavior after annealing, that is, an almost complete reduction of the interstitial component and preservation of the substitutional component. In the photoelectron diffraction, a sensitivity of high-energy polar plots to the incorporation sites of photoemitting atoms into the atomic lattice has been shown. As a consequence, the experimental polar plots from substitutional and interstitial Mn atoms, which are

Název v anglickém jazyce

Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Popis výsledku anglicky

Photoelectron spectroscopy and diffraction have been used to investigate structural changes during the annealing process of Ga(1-x)Mn(x)As samples. Hard x-ray radiation helped in observing photoelectron core-level spectra and electron diffraction from the bulk underlying the oxidized surface layer. High electron-energy resolution enabled us to separate the components due to substitutional and interstitial Mn atoms in the intrinsic Mn 2p(3/2) photoemission profile, resulting in two peaks at 638.8 and 639.5 eV binding energy, respectively. The peaks display the known characteristic behavior after annealing, that is, an almost complete reduction of the interstitial component and preservation of the substitutional component. In the photoelectron diffraction, a sensitivity of high-energy polar plots to the incorporation sites of photoemitting atoms into the atomic lattice has been shown. As a consequence, the experimental polar plots from substitutional and interstitial Mn atoms, which are

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

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Svazek periodika

83

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

235327, 1-6

Kód UT WoS článku

000291654500005

EID výsledku v databázi Scopus

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