Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10189372" target="_blank" >RIV/00216208:11320/13:10189372 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s11664-013-2683-z" target="_blank" >http://dx.doi.org/10.1007/s11664-013-2683-z</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-013-2683-z" target="_blank" >10.1007/s11664-013-2683-z</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

Popis výsledku v původním jazyce

We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed samples showed different resistivities after the treatment. For both samples, we observed very strong emissions in the excitonic spectral region and revealed fine structures of exciton emissions in the PL spectrum. In the sample with high resistivity, we found one ionized donor-bound exciton peak, (D+,X), that we ascribed to incorporated Bi atoms occupying Cd sites in the CdTe. The temperature dependence of the (D+,X) peak emission had an associated activation energy of 3.59 meV for the exciton bound to this ionized donor. Meanwhile, a donor-acceptor pair peak at 1.5315 eV, which was absent from the PL of the low-resistivity sample, suggested the likelihood of some Bi atoms occupying Te sites in the high-resistivity sample. Our findings highlight the need for detailed investigation of annealing conditions to ensure precise control of the el

Název v anglickém jazyce

Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth

Popis výsledku anglicky

We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed samples showed different resistivities after the treatment. For both samples, we observed very strong emissions in the excitonic spectral region and revealed fine structures of exciton emissions in the PL spectrum. In the sample with high resistivity, we found one ionized donor-bound exciton peak, (D+,X), that we ascribed to incorporated Bi atoms occupying Cd sites in the CdTe. The temperature dependence of the (D+,X) peak emission had an associated activation energy of 3.59 meV for the exciton bound to this ionized donor. Meanwhile, a donor-acceptor pair peak at 1.5315 eV, which was absent from the PL of the low-resistivity sample, suggested the likelihood of some Bi atoms occupying Te sites in the high-resistivity sample. Our findings highlight the need for detailed investigation of annealing conditions to ensure precise control of the el

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

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Svazek periodika

42

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

3138-3141

Kód UT WoS článku

000326046800021

EID výsledku v databázi Scopus

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