Graphene Growth on Pt(111) by Ethylene Chemical Vapor Deposition at Surface Temperatures near 1000 K

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10319414" target="_blank" >RIV/00216208:11320/15:10319414 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/jp508177k" target="_blank" >http://dx.doi.org/10.1021/jp508177k</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/jp508177k" target="_blank" >10.1021/jp508177k</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene Growth on Pt(111) by Ethylene Chemical Vapor Deposition at Surface Temperatures near 1000 K

Popis výsledku v původním jazyce

The nucleation and growth of graphene islands on a Pt(111) surface were examined at temperatures near 1000 K. Graphene was grown by chemical vapor deposition of ethylene, and a low-energy electron microscope (LEEM) was used to image the growing grapheneislands with resolution of 10 nm and to perform spatially localized electron diffraction. It is shown that graphene grows bidirectionally over the Step edges of Pt, and its formation can induce substantial changes in the platinum surface morphology. Average sire and density of graphene islands strongly depend on surface temperature during deposition. Postdosing Auger electron spectroscopy was employed as a complementary macroscopic technique to measure the total carbon deposited as a result of ethylenedissociative sticking and decomposition. The initial dissociative sticking coefficient S-0(T-g = 300 K, T-s ) for ethylene was found to decrease with increasing Surface temperature until a temperature of T-s = 850 K was reached whereupon

Název v anglickém jazyce

Graphene Growth on Pt(111) by Ethylene Chemical Vapor Deposition at Surface Temperatures near 1000 K

Popis výsledku anglicky

The nucleation and growth of graphene islands on a Pt(111) surface were examined at temperatures near 1000 K. Graphene was grown by chemical vapor deposition of ethylene, and a low-energy electron microscope (LEEM) was used to image the growing grapheneislands with resolution of 10 nm and to perform spatially localized electron diffraction. It is shown that graphene grows bidirectionally over the Step edges of Pt, and its formation can induce substantial changes in the platinum surface morphology. Average sire and density of graphene islands strongly depend on surface temperature during deposition. Postdosing Auger electron spectroscopy was employed as a complementary macroscopic technique to measure the total carbon deposited as a result of ethylenedissociative sticking and decomposition. The initial dissociative sticking coefficient S-0(T-g = 300 K, T-s ) for ethylene was found to decrease with increasing Surface temperature until a temperature of T-s = 850 K was reached whereupon

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

—

Svazek periodika

119

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

4759-4768

Kód UT WoS článku

000350840700035

EID výsledku v databázi Scopus

2-s2.0-84924198254