Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10330445" target="_blank" >RIV/00216208:11320/16:10330445 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.94.075306" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.94.075306</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.94.075306" target="_blank" >10.1103/PhysRevB.94.075306</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction

Popis výsledku v původním jazyce

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 mu m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p-n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p-n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p-n bias.

Název v anglickém jazyce

Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction

Popis výsledku anglicky

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 mu m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p-n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p-n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p-n bias.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

<a href="/cs/project/GB14-37427G" target="_blank" >GB14-37427G: Centrum spintroniky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICAL REVIEW B

ISSN

2469-9950

e-ISSN

—

Svazek periodika

94

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000381308700006

EID výsledku v databázi Scopus

2-s2.0-84981294491