Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10367383" target="_blank" >RIV/00216208:11320/17:10367383 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4999023" target="_blank" >http://dx.doi.org/10.1063/1.4999023</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4999023" target="_blank" >10.1063/1.4999023</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Popis výsledku v původním jazyce

The present comprehensive study of photoluminescence (PL) quantum yield (QY) of Si nanocrystals (SiNCs) in Si-rich oxynitride (SRON) superlattices was performed over a broad set of samples. The PL QY is sensitive mostly to the thickness of SRON and barrier oxide layers and to the passivation procedures. Annealing in hydrogen improves the QY proportionally to the NC surface area by passivating the NC/oxide interface defects present at a surface density of about 2.5 x 10(12) cm(-2). The maximum external QY of nearly 30% is found in well-passivated superlattices with a SiNC size of about 4 nm and a SiO2 barrier thickness of 2 nm or larger. We reveal the existence of an extended near-infrared tail of the PL spectra, whose weak intensity anti-correlates with the external QY. The relative intensity of this emission increases with temperature as well as for strong excitation above the PL saturation level and may be related to excitation energy transfer to the structural defects near NCs. Finally, we discuss the possible mechanisms which are responsible for limiting the attainable PL QY and which may be the subject of future efforts to further increase the PL QY. Published by AIP Publishing.

Název v anglickém jazyce

Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Popis výsledku anglicky

The present comprehensive study of photoluminescence (PL) quantum yield (QY) of Si nanocrystals (SiNCs) in Si-rich oxynitride (SRON) superlattices was performed over a broad set of samples. The PL QY is sensitive mostly to the thickness of SRON and barrier oxide layers and to the passivation procedures. Annealing in hydrogen improves the QY proportionally to the NC surface area by passivating the NC/oxide interface defects present at a surface density of about 2.5 x 10(12) cm(-2). The maximum external QY of nearly 30% is found in well-passivated superlattices with a SiNC size of about 4 nm and a SiO2 barrier thickness of 2 nm or larger. We reveal the existence of an extended near-infrared tail of the PL spectra, whose weak intensity anti-correlates with the external QY. The relative intensity of this emission increases with temperature as well as for strong excitation above the PL saturation level and may be related to excitation energy transfer to the structural defects near NCs. Finally, we discuss the possible mechanisms which are responsible for limiting the attainable PL QY and which may be the subject of future efforts to further increase the PL QY. Published by AIP Publishing.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-09745J" target="_blank" >GC16-09745J: Porozumění účinnosti luminiscence křemíkových kvantových teček</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

122

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

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Kód UT WoS článku

000413038500022

EID výsledku v databázi Scopus

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