Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10371315" target="_blank" >RIV/00216208:11320/17:10371315 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=CGbAwTH4HE" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=CGbAwTH4HE</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10008-016-3400-7" target="_blank" >10.1007/s10008-016-3400-7</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

Popis výsledku v původním jazyce

We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

Název v anglickém jazyce

Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

Popis výsledku anglicky

We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/EF16_013%2F0001788" target="_blank" >EF16_013/0001788: Laboratoř fyziky povrchů - Optická dráha pro výzkum materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Solid State Electrochemistry

ISSN

1432-8488

e-ISSN

—

Svazek periodika

21

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

657-664

Kód UT WoS článku

000394379600004

EID výsledku v databázi Scopus

2-s2.0-84989842594