Thermally stimulated exciton emission in Si nanocrystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384573" target="_blank" >RIV/00216208:11320/18:10384573 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1038/lsa.2017.133" target="_blank" >https://doi.org/10.1038/lsa.2017.133</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/lsa.2017.133" target="_blank" >10.1038/lsa.2017.133</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermally stimulated exciton emission in Si nanocrystals

Popis výsledku v původním jazyce

Increasing temperature is known to quench the excitonic emission of bulk silicon, which is due to thermally induced dissociation of excitons. Here, we demonstrate that the effect of temperature on the excitonic emission is reversed for quantum-confined silicon nanocrystals. Using laser-induced heating of silicon nanocrystals embedded in SiO2, we achieved a more than threefold (&gt;300%) increase in the radiative (photon) emission rate. We theoretically modeled the observed enhancement in terms of the thermally stimulated effect, taking into account the massive phonon production under intense illumination. These results elucidate one more important advantage of silicon nanostructures, illustrating that their optical properties can be influenced by temperature. They also provide an important insight into the mechanisms of energy conversion and dissipation in ensembles of silicon nanocrystals in solid matrices. In practice, the radiative rate enhancement under strong continuous wave optical pumping is relevant for the possible application of silicon nanocrystals for spectral conversion layers in concentrator photovoltaics.

Název v anglickém jazyce

Thermally stimulated exciton emission in Si nanocrystals

Popis výsledku anglicky

Increasing temperature is known to quench the excitonic emission of bulk silicon, which is due to thermally induced dissociation of excitons. Here, we demonstrate that the effect of temperature on the excitonic emission is reversed for quantum-confined silicon nanocrystals. Using laser-induced heating of silicon nanocrystals embedded in SiO2, we achieved a more than threefold (&gt;300%) increase in the radiative (photon) emission rate. We theoretically modeled the observed enhancement in terms of the thermally stimulated effect, taking into account the massive phonon production under intense illumination. These results elucidate one more important advantage of silicon nanostructures, illustrating that their optical properties can be influenced by temperature. They also provide an important insight into the mechanisms of energy conversion and dissipation in ensembles of silicon nanocrystals in solid matrices. In practice, the radiative rate enhancement under strong continuous wave optical pumping is relevant for the possible application of silicon nanocrystals for spectral conversion layers in concentrator photovoltaics.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GC16-09745J" target="_blank" >GC16-09745J: Porozumění účinnosti luminiscence křemíkových kvantových teček</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Light-Science &amp; Applications

ISSN

2047-7538

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

26 January 2018

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000424453600008

EID výsledku v databázi Scopus

2-s2.0-85041901881