Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384575" target="_blank" >RIV/00216208:11320/18:10384575 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/aelm.201700666" target="_blank" >https://doi.org/10.1002/aelm.201700666</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/aelm.201700666" target="_blank" >10.1002/aelm.201700666</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices

Popis výsledku v původním jazyce

The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO2-embedded Si NCs are employed as an active layer within a light-emitting device structure. It is demonstrated that the use of an additional thin Si3N4 interlayer within the metal-insulator-semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si3N4 interlayer on the structural, optical, electrical, and electro-optical properties of a Si NC-based light emitter is reported, and the physics underlying these results is discussed.

Název v anglickém jazyce

Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices

Popis výsledku anglicky

The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO2-embedded Si NCs are employed as an active layer within a light-emitting device structure. It is demonstrated that the use of an additional thin Si3N4 interlayer within the metal-insulator-semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si3N4 interlayer on the structural, optical, electrical, and electro-optical properties of a Si NC-based light emitter is reported, and the physics underlying these results is discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GC16-09745J" target="_blank" >GC16-09745J: Porozumění účinnosti luminiscence křemíkových kvantových teček</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Electronic Materials

ISSN

2199-160X

e-ISSN

—

Svazek periodika

4

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

—

Kód UT WoS článku

000431958800013

EID výsledku v databázi Scopus

2-s2.0-85044220620