Electrically induced and detected Neel vector reversal in a collinear antiferromagnet

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10385120" target="_blank" >RIV/00216208:11320/18:10385120 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00497316

Výsledek na webu

<a href="https://doi.org/10.1038/s41467-018-07092-2" target="_blank" >https://doi.org/10.1038/s41467-018-07092-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41467-018-07092-2" target="_blank" >10.1038/s41467-018-07092-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electrically induced and detected Neel vector reversal in a collinear antiferromagnet

Popis výsledku v původním jazyce

Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90 degrees reorientations of the Neel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance. Here we show that in the same antiferromagnetic CuMnAs films as used in these earlier experiments we can also control 180 degrees Neel vector reversals by switching the polarity of the writing current. Moreover, the two stable states with opposite Neel vector orientations in this collinear antiferromagnet can be electrically distinguished by measuring a second-order magnetoresistance effect. We discuss the general magnetic point group symmetries allowing for this electrical readout effect and its specific microscopic origin in CuMnAs.

Název v anglickém jazyce

Electrically induced and detected Neel vector reversal in a collinear antiferromagnet

Popis výsledku anglicky

Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90 degrees reorientations of the Neel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance. Here we show that in the same antiferromagnetic CuMnAs films as used in these earlier experiments we can also control 180 degrees Neel vector reversals by switching the polarity of the writing current. Moreover, the two stable states with opposite Neel vector orientations in this collinear antiferromagnet can be electrically distinguished by measuring a second-order magnetoresistance effect. We discuss the general magnetic point group symmetries allowing for this electrical readout effect and its specific microscopic origin in CuMnAs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Communications [online]

ISSN

2041-1723

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

listopad

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000449494100011

EID výsledku v databázi Scopus

2-s2.0-85056106843