Surface structures of tellurium on Si(111)-(7 x 7) studied by low-energy electron diffraction and scanning tunneling microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10395951" target="_blank" >RIV/00216208:11320/19:10395951 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=-JNsAOcSiS" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=-JNsAOcSiS</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.susc.2018.11.016" target="_blank" >10.1016/j.susc.2018.11.016</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface structures of tellurium on Si(111)-(7 x 7) studied by low-energy electron diffraction and scanning tunneling microscopy

Popis výsledku v původním jazyce

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)-(7 x 7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)-(7 x 7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to 770 K results in a weak (7 x 7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)-(7 x 7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7 x 7) unit cells. Increasing the substrate temperature further to 920 K leads to a Te/Si(111)-(2 root 3 x 2 root 3)R30 degrees surface reconstruction. We find that this surface configuration has an atomically fiat structure with threefold symmetry.

Název v anglickém jazyce

Surface structures of tellurium on Si(111)-(7 x 7) studied by low-energy electron diffraction and scanning tunneling microscopy

Popis výsledku anglicky

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi2Te3. Here, we report the formation of a Te buffer layer on Si(111)-(7 x 7) by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). While deposition of several monolayer (ML) of Te on the Si(111)-(7 x 7) surface at room temperature results in an amorphous Te layer, increasing the substrate temperature to 770 K results in a weak (7 x 7) electron diffraction pattern. Scanning tunneling microscopy of this surface shows remaining corner holes from the Si(111)-(7 x 7) surface reconstruction and clusters in the faulted and unfaulted halves of the (7 x 7) unit cells. Increasing the substrate temperature further to 920 K leads to a Te/Si(111)-(2 root 3 x 2 root 3)R30 degrees surface reconstruction. We find that this surface configuration has an atomically fiat structure with threefold symmetry.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface Science

ISSN

0039-6028

e-ISSN

—

Svazek periodika

681

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

130-133

Kód UT WoS článku

000460496100020

EID výsledku v databázi Scopus

2-s2.0-85057617451