Gallium Oxide for High-Power Optical Applications
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10421731" target="_blank" >RIV/00216208:11320/20:10421731 - isvavai.cz</a>
Výsledek na webu
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=sAwFpbUYK~" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=sAwFpbUYK~</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adom.201901522" target="_blank" >10.1002/adom.201901522</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Gallium Oxide for High-Power Optical Applications
Popis výsledku v původním jazyce
Gallium oxide (Ga2O3) is an emerging wide-bandgap transparent conductive oxide (TCO) with potential applications for high-power optical systems. Herein, Ga2O3 fabricated nanostructures are described, which demonstrate high-power laser induced damage threshold (LIDT). Furthermore, the demonstration of an electron accelerator based on Ga2O3 gratings is reported. These unique Ga2O3 nanostructures provide acceleration gradients exceeding those possible with conventional RF accelerators due to the high breakdown threshold of Ga2O3. In addition, the laser damage threshold and acceleration performance of a Ga2O3-based dielectric laser accelerator (DLA) are compared with those of a DLA based on sapphire, a material known for its high breakdown strength. Finally, the potential of Ga2O3 thin-film coatings as field reduction layers for Si nanostructures is shown; they potentially improve the effective LIDT and performance of Si-based DLAs and other high-power optical structures. These results could provide a foundation for new high-power optical applications with Ga2O3.
Název v anglickém jazyce
Gallium Oxide for High-Power Optical Applications
Popis výsledku anglicky
Gallium oxide (Ga2O3) is an emerging wide-bandgap transparent conductive oxide (TCO) with potential applications for high-power optical systems. Herein, Ga2O3 fabricated nanostructures are described, which demonstrate high-power laser induced damage threshold (LIDT). Furthermore, the demonstration of an electron accelerator based on Ga2O3 gratings is reported. These unique Ga2O3 nanostructures provide acceleration gradients exceeding those possible with conventional RF accelerators due to the high breakdown threshold of Ga2O3. In addition, the laser damage threshold and acceleration performance of a Ga2O3-based dielectric laser accelerator (DLA) are compared with those of a DLA based on sapphire, a material known for its high breakdown strength. Finally, the potential of Ga2O3 thin-film coatings as field reduction layers for Si nanostructures is shown; they potentially improve the effective LIDT and performance of Si-based DLAs and other high-power optical structures. These results could provide a foundation for new high-power optical applications with Ga2O3.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
—
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Advanced Optical Materials [online]
ISSN
2195-1071
e-ISSN
—
Svazek periodika
2020
Číslo periodika v rámci svazku
8
Stát vydavatele periodika
DE - Spolková republika Německo
Počet stran výsledku
6
Strana od-do
1-6
Kód UT WoS článku
000507932100001
EID výsledku v databázi Scopus
2-s2.0-85078654000