Time-Resolved Morphology and Kinetic Studies of Pulsed Laser Deposition-Grown Pt Layers on Sapphire at Different Growth Temperatures by in Situ Grazing Incidence Small-Angle X-ray Scattering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F21%3A10426553" target="_blank" >RIV/00216208:11320/21:10426553 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/21:00121248

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=xEWMOtjdDV" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=xEWMOtjdDV</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.langmuir.0c02952" target="_blank" >10.1021/acs.langmuir.0c02952</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Time-Resolved Morphology and Kinetic Studies of Pulsed Laser Deposition-Grown Pt Layers on Sapphire at Different Growth Temperatures by in Situ Grazing Incidence Small-Angle X-ray Scattering

Popis výsledku v původním jazyce

Optimizing and monitoring the growth conditions of Pt films, often used as bottom electrodes in multiferroic material systems, represents a highly relevant issue that is of importance for controlling the crystalline quality and performance of ferroelectric oxides such as, e.g. LuFeO3. We performed a time-resolved monitoring of the growth and morphology of Pt films during pulsed laser deposition (PLD) in dependence on the grown film effective thickness and on the growth temperature Tg using in situ grazing incidence small-angle X-ray scattering (GISAXS). Through real-time analysis and modeling of GISAXS patterns, we could fully characterize the influence of Tg on the morphology and on the growth kinetics of the Pt layers. Consequently, critical and characteristic effective thicknesses for the transitions nucleation phase (I)/coalescence phase (II) and coalescence phase (II)/coarsening phase (III) could be determined. In combination with complementary microscopic imaging and chemical mapping via combined SEM/EDXS, we demonstrate the occurrence of a morphological progression in the Pt PLD-grown Pt films, changing from grains at room temperature to a 3D-island morphology at 300 degrees C, further to a hole-free structure at 500 degrees C, and finally to a channel structure for 700 and 900 degrees C. The film topography, as characterized by atomic force microscopy (AFM), favors the PLD growth of Pt layers at temperatures beyond 700 degrees C where the film is homogeneous, continuous, and hole-free with a flat and smooth surface. The double dependency of the percolation transition on the film effective thickness and on the growth temperature has been established by measuring the electrical conductivity.

Název v anglickém jazyce

Time-Resolved Morphology and Kinetic Studies of Pulsed Laser Deposition-Grown Pt Layers on Sapphire at Different Growth Temperatures by in Situ Grazing Incidence Small-Angle X-ray Scattering

Popis výsledku anglicky

Optimizing and monitoring the growth conditions of Pt films, often used as bottom electrodes in multiferroic material systems, represents a highly relevant issue that is of importance for controlling the crystalline quality and performance of ferroelectric oxides such as, e.g. LuFeO3. We performed a time-resolved monitoring of the growth and morphology of Pt films during pulsed laser deposition (PLD) in dependence on the grown film effective thickness and on the growth temperature Tg using in situ grazing incidence small-angle X-ray scattering (GISAXS). Through real-time analysis and modeling of GISAXS patterns, we could fully characterize the influence of Tg on the morphology and on the growth kinetics of the Pt layers. Consequently, critical and characteristic effective thicknesses for the transitions nucleation phase (I)/coalescence phase (II) and coalescence phase (II)/coarsening phase (III) could be determined. In combination with complementary microscopic imaging and chemical mapping via combined SEM/EDXS, we demonstrate the occurrence of a morphological progression in the Pt PLD-grown Pt films, changing from grains at room temperature to a 3D-island morphology at 300 degrees C, further to a hole-free structure at 500 degrees C, and finally to a channel structure for 700 and 900 degrees C. The film topography, as characterized by atomic force microscopy (AFM), favors the PLD growth of Pt layers at temperatures beyond 700 degrees C where the film is homogeneous, continuous, and hole-free with a flat and smooth surface. The double dependency of the percolation transition on the film effective thickness and on the growth temperature has been established by measuring the electrical conductivity.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Langmuir : the ACS journal of surfaces and colloids

ISSN

0743-7463

e-ISSN

—

Svazek periodika

37

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

16

Strana od-do

734-749

Kód UT WoS článku

000612351800015

EID výsledku v databázi Scopus

2-s2.0-85100077835