Single-Crystal Growth and Fermi Surface Properties of LaPd2Si2: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd2Si2

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10450666" target="_blank" >RIV/00216208:11320/22:10450666 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=mnkEAdiYSW" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=mnkEAdiYSW</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.7566/JPSJ.91.114708" target="_blank" >10.7566/JPSJ.91.114708</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Single-Crystal Growth and Fermi Surface Properties of LaPd2Si2: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd2Si2

Popis výsledku v původním jazyce

We report the single-crystal growth and comparative Fermi surface studies of LaPd2Si2 via de Haas-van Alphen (dHvA) experiments and theoretical band structure calculations, as a non-magnetic reference for pressure-induced heavy-fermion superconductor CePd2Si2. We grew the single crystals of LaPd2Si2 using the Czochralski and floating zone method. High-quality single crystals of LaPd2Si2 were obtained using the floating zone method, and clear dHvA signals were detected. We detected main Fermi surfaces in angular dependence measurements of the dHvA frequencies, revealing a good agreement with the result of band structure calculations based on the localized-4f electron model. From our dHvA measurements using the high-quality single crystal, as well as our theoretical band structure calculations, we conclude that the 4f electrons in CePd2Si2 are itinerant rather than localized in an intermediate antiferromagnetic state.

Název v anglickém jazyce

Single-Crystal Growth and Fermi Surface Properties of LaPd2Si2: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd2Si2

Popis výsledku anglicky

We report the single-crystal growth and comparative Fermi surface studies of LaPd2Si2 via de Haas-van Alphen (dHvA) experiments and theoretical band structure calculations, as a non-magnetic reference for pressure-induced heavy-fermion superconductor CePd2Si2. We grew the single crystals of LaPd2Si2 using the Czochralski and floating zone method. High-quality single crystals of LaPd2Si2 were obtained using the floating zone method, and clear dHvA signals were detected. We detected main Fermi surfaces in angular dependence measurements of the dHvA frequencies, revealing a good agreement with the result of band structure calculations based on the localized-4f electron model. From our dHvA measurements using the high-quality single crystal, as well as our theoretical band structure calculations, we conclude that the 4f electrons in CePd2Si2 are itinerant rather than localized in an intermediate antiferromagnetic state.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018096" target="_blank" >LM2018096: Laboratoř pro syntézu a měření materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the Physical Society of Japan

ISSN

0031-9015

e-ISSN

—

Svazek periodika

91

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

8

Strana od-do

114708

Kód UT WoS článku

000879930400001

EID výsledku v databázi Scopus

2-s2.0-85144990609