Preparation and characterization of YMnO3 thin films by metal-organic decomposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10451489" target="_blank" >RIV/00216208:11320/23:10451489 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=k3_pZd9Z1I" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=k3_pZd9Z1I</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.35848/1347-4065/ac8f9d" target="_blank" >10.35848/1347-4065/ac8f9d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation and characterization of YMnO3 thin films by metal-organic decomposition

Popis výsledku v původním jazyce

Hexagonal rare-earth manganese oxide YMnO(3) thin films were prepared on yttria-stabilized zirconia (111) substrates by metal organic decomposition method. The crystallinity and morphology of YMnO(3) thin films crystallized at various temperatures were examined by X-ray diffraction and atomic force microscopy measurements, respectively. Single phase YMnO(3) was obtained for the sample prepared by annealing temperatures of 950 °C. AFM analysis revealed that a smooth surface with a roughness of 0.15 nm was achieved for YMnO(3) thin film annealed at 950 °C and 1000 °C, while three-dimensional growth for other samples prepared at 750-900 °C, 1050 °C, and 1100 °C. A narrow band at 1.6 eV and a broad band at 5 eV due to electronic transitions in the manganese and oxygen bands were observed in an absorption spectrum.

Název v anglickém jazyce

Preparation and characterization of YMnO3 thin films by metal-organic decomposition

Popis výsledku anglicky

Hexagonal rare-earth manganese oxide YMnO(3) thin films were prepared on yttria-stabilized zirconia (111) substrates by metal organic decomposition method. The crystallinity and morphology of YMnO(3) thin films crystallized at various temperatures were examined by X-ray diffraction and atomic force microscopy measurements, respectively. Single phase YMnO(3) was obtained for the sample prepared by annealing temperatures of 950 °C. AFM analysis revealed that a smooth surface with a roughness of 0.15 nm was achieved for YMnO(3) thin film annealed at 950 °C and 1000 °C, while three-dimensional growth for other samples prepared at 750-900 °C, 1050 °C, and 1100 °C. A narrow band at 1.6 eV and a broad band at 5 eV due to electronic transitions in the manganese and oxygen bands were observed in an absorption spectrum.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Japanese Journal of Applied Physics

ISSN

0021-4922

e-ISSN

1347-4065

Svazek periodika

62

Číslo periodika v rámci svazku

SB / Supplement B

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

4

Strana od-do

SB1005

Kód UT WoS článku

000885590400001

EID výsledku v databázi Scopus

2-s2.0-85142414433