Tailoring opto-electronic and interface properties via electrochemical doping in Poly(3-hexylthiophene)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10469804" target="_blank" >RIV/00216208:11320/23:10469804 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2GEjYAVP5t" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2GEjYAVP5t</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.cap.2023.05.007" target="_blank" >10.1016/j.cap.2023.05.007</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tailoring opto-electronic and interface properties via electrochemical doping in Poly(3-hexylthiophene)

Popis výsledku v původním jazyce

The thin films of electropolymerized poly(3-hexylthiophene) [e-P3HT] are simultaneously doped on the transparent indium tin oxide substrate via anodic oxidation. Distinctive doping levels are achieved by systematically de-doping the films in a reverse bias electrochemical process. Raman characterization shows the presence of doping-induced polarons. In the UV-Vis spectrum, two distinct absorption regions are found for P3HT suggesting the presence of doping-induced polarons and the Urbach calculations reveal a fine-tuning of bandgap with doping level. Further, the PL studies show exponential quenching in intensity due to charge transfer which can be precisely tuned by the doping level in the e-P3HT. The current-voltage measurements under the illumination of a 532 nm laser on a sandwich device with top contact of silver are also performed and it is found that an optimized doping level is essential to acquire the best photo response. Impedance spectroscopy on the devices and their equivalent circuit analysis reveals that in addition to the bulk system, doping can also vastly modify the interfacial properties. Our studies pave the direction to tailor and optimize different optoelectronic and interfacerelated properties of e-P3HT thin films via electrochemical doping for optimized optoelectronic devices and applied physics studies.

Název v anglickém jazyce

Tailoring opto-electronic and interface properties via electrochemical doping in Poly(3-hexylthiophene)

Popis výsledku anglicky

The thin films of electropolymerized poly(3-hexylthiophene) [e-P3HT] are simultaneously doped on the transparent indium tin oxide substrate via anodic oxidation. Distinctive doping levels are achieved by systematically de-doping the films in a reverse bias electrochemical process. Raman characterization shows the presence of doping-induced polarons. In the UV-Vis spectrum, two distinct absorption regions are found for P3HT suggesting the presence of doping-induced polarons and the Urbach calculations reveal a fine-tuning of bandgap with doping level. Further, the PL studies show exponential quenching in intensity due to charge transfer which can be precisely tuned by the doping level in the e-P3HT. The current-voltage measurements under the illumination of a 532 nm laser on a sandwich device with top contact of silver are also performed and it is found that an optimized doping level is essential to acquire the best photo response. Impedance spectroscopy on the devices and their equivalent circuit analysis reveals that in addition to the bulk system, doping can also vastly modify the interfacial properties. Our studies pave the direction to tailor and optimize different optoelectronic and interfacerelated properties of e-P3HT thin films via electrochemical doping for optimized optoelectronic devices and applied physics studies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Current applied physics

ISSN

1567-1739

e-ISSN

1878-1675

Svazek periodika

52

Číslo periodika v rámci svazku

52

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

57-64

Kód UT WoS článku

001012620400001

EID výsledku v databázi Scopus

2-s2.0-85160508799