Modelling Polarization Effects in a CdZnTe Sensor at Low Bias
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10472693" target="_blank" >RIV/00216208:11320/23:10472693 - isvavai.cz</a>
Výsledek na webu
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2Ckpawk_xP" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2Ckpawk_xP</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/s23125681" target="_blank" >10.3390/s23125681</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Modelling Polarization Effects in a CdZnTe Sensor at Low Bias
Popis výsledku v původním jazyce
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift-diffusion and Poisson's equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum.
Název v anglickém jazyce
Modelling Polarization Effects in a CdZnTe Sensor at Low Bias
Popis výsledku anglicky
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift-diffusion and Poisson's equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10306 - Optics (including laser optics and quantum optics)
Návaznosti výsledku
Projekt
<a href="/cs/project/GA19-11920S" target="_blank" >GA19-11920S: Transport náboje v pixelových detektorech záření CdZnTe</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2023
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Sensors
ISSN
1424-8220
e-ISSN
1424-8220
Svazek periodika
23
Číslo periodika v rámci svazku
12
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
13
Strana od-do
5681
Kód UT WoS článku
001015854000001
EID výsledku v databázi Scopus
2-s2.0-85164025185