Ultrafast room-temperature valley manipulation in silicon and diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10500803" target="_blank" >RIV/00216208:11320/25:10500803 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=GhrC_8SXV6" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=GhrC_8SXV6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41567-025-02862-4" target="_blank" >10.1038/s41567-025-02862-4</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ultrafast room-temperature valley manipulation in silicon and diamond

Popis výsledku v původním jazyce

Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their electron populations. However, to compete with conventional electronics, it is necessary to develop universal and fast methods for controlling and reading the valley quantum number of the electrons. Even though selective optical manipulation of electron populations in inequivalent valleys has been demonstrated in two-dimensional crystals with broken time-reversal symmetry, such control is highly desired in many technologically important semiconductor materials, including silicon and diamond. We demonstrate an ultrafast technique for the generation and read-out of a valley-polarized population of electrons in bulk semiconductors on subpicosecond timescales. The principle is based on the unidirectional intervalley scattering of electrons accelerated by an oscillating electric field of linearly polarized infrared femtosecond pulses. Our results are an advance in the development of potential room-temperature valleytronic devices operating at terahertz frequencies and compatible with contemporary silicon-based technology.

Název v anglickém jazyce

Ultrafast room-temperature valley manipulation in silicon and diamond

Popis výsledku anglicky

Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their electron populations. However, to compete with conventional electronics, it is necessary to develop universal and fast methods for controlling and reading the valley quantum number of the electrons. Even though selective optical manipulation of electron populations in inequivalent valleys has been demonstrated in two-dimensional crystals with broken time-reversal symmetry, such control is highly desired in many technologically important semiconductor materials, including silicon and diamond. We demonstrate an ultrafast technique for the generation and read-out of a valley-polarized population of electrons in bulk semiconductors on subpicosecond timescales. The principle is based on the unidirectional intervalley scattering of electrons accelerated by an oscillating electric field of linearly polarized infrared femtosecond pulses. Our results are an advance in the development of potential room-temperature valleytronic devices operating at terahertz frequencies and compatible with contemporary silicon-based technology.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Physics

ISSN

1745-2473

e-ISSN

1745-2481

Svazek periodika

21

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

947-952

Kód UT WoS článku

001466240700001

EID výsledku v databázi Scopus

2-s2.0-105002472803