Quantum confinement effects in the topological Dirac semimetal α-Sn on InSb(111)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10508655" target="_blank" >RIV/00216208:11320/25:10508655 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=sfjfMUmb.x" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=sfjfMUmb.x</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matt.2025.102194" target="_blank" >10.1016/j.matt.2025.102194</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Quantum confinement effects in the topological Dirac semimetal α-Sn on InSb(111)

Popis výsledku v původním jazyce

The diamond-like allotrope of Sn (alpha-Sn) is tantalizing, being an elemental semimetal that hosts a range of topological properties. Despite the intriguing potential of this quantum material, a detailed understanding of its nontrivial electronic structure remains relatively poor. Here, we prepared alpha-Sn in a well-defined quantum phase (i.e., topological Dirac semimetal) by applying a compressive strain via epitaxial growth on the (111) surface of an InSb substrate. We varied the thickness of the alpha-Sn epilayer to single out the emergence of quantum confinement effects. Our electrical investigation suggests a thickness-dependent modification of transport mechanisms. These results are complemented by the measurement of the cyclotron resonance, which manifests the role of quantum confinement in defining the effective mass of topological Dirac fermions as bulk carriers. Our results contribute to deepening the knowledge of the alpha-Sn electronic properties. This is pivotal to increase the future applicability of Sn-based architectures into beyond-stateof-the-art devices.

Název v anglickém jazyce

Quantum confinement effects in the topological Dirac semimetal α-Sn on InSb(111)

Popis výsledku anglicky

The diamond-like allotrope of Sn (alpha-Sn) is tantalizing, being an elemental semimetal that hosts a range of topological properties. Despite the intriguing potential of this quantum material, a detailed understanding of its nontrivial electronic structure remains relatively poor. Here, we prepared alpha-Sn in a well-defined quantum phase (i.e., topological Dirac semimetal) by applying a compressive strain via epitaxial growth on the (111) surface of an InSb substrate. We varied the thickness of the alpha-Sn epilayer to single out the emergence of quantum confinement effects. Our electrical investigation suggests a thickness-dependent modification of transport mechanisms. These results are complemented by the measurement of the cyclotron resonance, which manifests the role of quantum confinement in defining the effective mass of topological Dirac fermions as bulk carriers. Our results contribute to deepening the knowledge of the alpha-Sn electronic properties. This is pivotal to increase the future applicability of Sn-based architectures into beyond-stateof-the-art devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Matter

ISSN

2590-2393

e-ISSN

2590-2385

Svazek periodika

8

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

102194

Kód UT WoS článku

001568696900008

EID výsledku v databázi Scopus

2-s2.0-105006943911