Pressure and Nitrogen Induced Phase Transition in Bilayer CVD Graphene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F25%3A10508661" target="_blank" >RIV/00216208:11320/25:10508661 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=vcjcv1yGE-" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=vcjcv1yGE-</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admt.202500929" target="_blank" >10.1002/admt.202500929</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pressure and Nitrogen Induced Phase Transition in Bilayer CVD Graphene

Popis výsledku v původním jazyce

Pressure-activated phase-transitions in 2D materials like graphene open new possibilities for developing materials with exceptional mechanical properties. Previous studies show that pressure-induced sp(2)-to-sp(3) phase-transitions occur only in epitaxial graphene on SiC. Unfortunately, this system has limitations for industrial applications. On the other hand, graphene synthesized by chemical vapor deposition (CVD) is cost-effective, scalable, and transferable on different substrates. However, pressure-activated sp(2)-to-sp(3) phase-transitions are absent in exfoliated graphene. Here, this work demonstrates that nitrogen-doping can enable pressure-induced graphene-to-diamond phase transitions in bilayer CVD graphene films on SiO(2) at room temperature. The sp(2)-to-sp(3) phase transition is verified by measuring with modulated nanoindentation (MoNI) the stiffness of the films as a function of the number of layers. Specifically, the indentation stiffness of a SiO(2) substrate covered with a nitrogen-doped bilayer CVD graphene film almost doubles compared to bare SiO(2); in contrast, nitrogen-doped single and multi-layer graphene films do not improve the stiffness of a SiO(2) substrate. Molecular dynamics simulations confirm that nitrogen favors the formation of sp(3)-coordinated carbon atoms and covalent bonding between two graphene layers when the films are under compression. Nitrogen-doping emerges as an effective way to obtain exceptional lightweight protective coatings utilizing scalable large-size CVD bilayer graphene films.

Název v anglickém jazyce

Pressure and Nitrogen Induced Phase Transition in Bilayer CVD Graphene

Popis výsledku anglicky

Pressure-activated phase-transitions in 2D materials like graphene open new possibilities for developing materials with exceptional mechanical properties. Previous studies show that pressure-induced sp(2)-to-sp(3) phase-transitions occur only in epitaxial graphene on SiC. Unfortunately, this system has limitations for industrial applications. On the other hand, graphene synthesized by chemical vapor deposition (CVD) is cost-effective, scalable, and transferable on different substrates. However, pressure-activated sp(2)-to-sp(3) phase-transitions are absent in exfoliated graphene. Here, this work demonstrates that nitrogen-doping can enable pressure-induced graphene-to-diamond phase transitions in bilayer CVD graphene films on SiO(2) at room temperature. The sp(2)-to-sp(3) phase transition is verified by measuring with modulated nanoindentation (MoNI) the stiffness of the films as a function of the number of layers. Specifically, the indentation stiffness of a SiO(2) substrate covered with a nitrogen-doped bilayer CVD graphene film almost doubles compared to bare SiO(2); in contrast, nitrogen-doped single and multi-layer graphene films do not improve the stiffness of a SiO(2) substrate. Molecular dynamics simulations confirm that nitrogen favors the formation of sp(3)-coordinated carbon atoms and covalent bonding between two graphene layers when the films are under compression. Nitrogen-doping emerges as an effective way to obtain exceptional lightweight protective coatings utilizing scalable large-size CVD bilayer graphene films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Materials Technologies

ISSN

2365-709X

e-ISSN

—

Svazek periodika

11

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

e00929

Kód UT WoS článku

001584069200001

EID výsledku v databázi Scopus

2-s2.0-105018208073